| 用于提高光刻分辨率的光学成像算法的研究 |
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| 引用本文： | 王国雄,王雪洁.用于提高光刻分辨率的光学成像算法的研究[J].半导体技术,2005,30(9):24-27. |
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| 作者姓名： | 王国雄 王雪洁 |
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| 作者单位： | 浙江大学超大规模集成电路设计研究所,杭州,310027;浙江大学城市学院信息与电子工程分院,杭州,310027 |
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| 基金项目： | 国家自然科学基金
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国家高技术研究发展计划(863计划) |
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| 摘 要： | 通过对光刻系统中光学成像系统的模拟,提出了改善光刻分辨率的途径以及基于卷积核的计算光强的方法,并介绍了光学系统的传输交叉系数具体计算过程.建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型,有助于开发由成品率驱动的版图设计工具,自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务.
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| 关 键 词： | 光刻仿真 分辨率提高技术 光学成像 |
| 文章编号： | 1003-353X(2005)09-0024-04 |
| 收稿时间： | 2005-04-08 |
| 修稿时间： | 2005年4月8日 |
The Algorithm of Optical Imaging in Lithography System for Enhancing Lithography Resolution |
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| WANG Guo-xiong,WANG Xue-jie.The Algorithm of Optical Imaging in Lithography System for Enhancing Lithography Resolution[J].Semiconductor Technology,2005,30(9):24-27. |
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| Authors: | WANG Guo-xiong WANG Xue-jie |
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| Abstract: | Through simulating the optical imaging system in lithography system, some ways toimprove the lithography resolution and a convolution-based method to calculate light intensity arepresented, and the calculating process of TCC (transmission cross coefficient) of optical system isintroduced. Developing the lithography process models to properly characterize critical dimension(CD) variations caused by proximity effects and distortions introduced by patterning tool, reticule,resist exposure, development and etching, they are beneficial to develop a yield-driven layout designtool, the engineers could use it to automate the tasks of advanced mask design, verification andinspection in deep sub-micron semiconductor manufacturing. |
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| Keywords: | lithography simulation resolution enhancement techniques optical imaging |
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