Microwave InxGa1?xAsyP1?y/InP f.e.t |
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| Authors: | Morkoc H Andrews JT Houng YM Sankaran R Bandy SG Antypas GA |
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| Affiliation: | Varian Associated Inc., Corporate Solid-State Laboratory, Palo Alto, USA; |
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| Abstract: | Microwave performance of InxGa1?xAsyP1?y quaternary alloy metal-semiconductor field effect transistors (m.e.s.f.e.t.s) is reported. Liquid-phase epitaxy (l.p.e.) using a step cooling technique has been employed to grow submicrometre quaternary layers having room-temperature bandgaps of 0.9, 1.0, 1.05, 1.15 and 1.2eV. F.E.T.s having gate dimensions of 1×200 ?m and a channel length of 5 ?m have been fabricated using 1.15 and 1.2 eV quaternary alloys. A maximum d.c. transconductance of about 10 mS and a maximum available gain of about 7 dB at 10 GHz have been obtained. |
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