首页 | 本学科首页   官方微博 | 高级检索  
     


Enhanced hydrogen storage performance of Cu3(BTC)2 in situ inserted with few-layer silicon-based nanosheets
Affiliation:1. School of Materials Science and Engineering, North University of China, Taiyuan 030000, China;2. Department of Material Engineering, Taiyuan Institute of Technology, Taiyuan 030000, China;3. Guangxi Academy of Sciences, Nanning 530000, China
Abstract:Silicon-based nanosheets (SNS) were synthesised via a mild (60 °C) and time-saving (8 h) modified topochemical method. Then, Cu3(BTC)2 and SNS@Cu3(BTC)2 were successfully synthesised by microwave irradiation, and their characteristics and hydrogen storage performance were analysed by multiple techniques. The accordion-like SNS exhibited void spaces, a unique low buckled structure, and ultrathin, almost transparent, loosely stacked layers with a high specific surface area (362 m2/g). After in-situ synthesis with Cu3(BTC)2, the SNS compound achieved a high specific surface area (1526 m2/g), outstanding hydrogen storage performance (5.6 wt%), and a desirable hydrogen diffusion coefficient (10?7). Thus, SNS doping improved the hydrogen storage performance of Cu3(BTC)2 by 64% through electron transfer reactions with Cu enabled by the unique composite nanostructure of SNS@Cu3(BTC)2. This study presents a promising method of synthesising SNS and porous composite materials for hydrogen storage.
Keywords:Metal-organic framework  Topochemical reaction  In-situ synthesis  Porous composite material  Microwave irradiation  Electron transfer  MOF"}  {"#name":"keyword"  "$":{"id":"kwrd0045"}  "$$":[{"#name":"text"  "_":"Metal-organic framework  PCT"}  {"#name":"keyword"  "$":{"id":"kwrd0055"}  "$$":[{"#name":"text"  "_":"Pressure-composition-temperature  SDS"}  {"#name":"keyword"  "$":{"id":"kwrd0065"}  "$$":[{"#name":"text"  "_":"Sodium dodecyl sulphate  SNS"}  {"#name":"keyword"  "$":{"id":"kwrd0075"}  "$$":[{"#name":"text"  "_":"Silicon-based nanosheets
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号