Chemical vapor deposition of aluminum for ulsi applications |
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| Authors: | Shi-Woo Rhee |
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| Affiliation: | (1) Laboratory for Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, 790-784 Pohang, Korea |
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| Abstract: | Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition
process for Al has been actively investigated for the application in ultra large scale integration. In this review, various
precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVI) are described.
Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical
reactions are also briefly described. |
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| Keywords: | Chemical Vapor Deposition (CVD) of Aluminum Aluminum Thin Film Selective Deposition Metal Organic CVD |
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