| InP基近红外波段量子线激光器的电致发光谱 |
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| 作者姓名： | 杨新荣 徐波 王占国 任芸芸 焦玉恒 梁凌燕 汤晨光 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China and Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| 摘 要： | 制备了InP基近红外波段量子线激光器,在改变注入条件的室温连续电致发光谱测试中,观察到了不同于带填充效应的谱型变化.低激励时,高能峰先出现;随激励电流增加,高能峰减弱并随后消失,同时低能峰出现并激射.认为激光器随注入电流的增加表现出的这种特殊的激射谱,是由自组织纳米结构尺寸的不均匀分布引起的.
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| 关 键 词： | InAs量子线 InP基 激光器 激射谱 |
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