| 台面结构对4H-SiC紫外探测器性能的影响 |
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| 作者姓名： | 刘兴昉 孙国胜 李晋闽 赵永梅 宁瑾 王雷 赵万顺 罗木昌 李家业 曾一平 |
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| 作者单位： | Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; State Key Laboratory of Transducer Technology。Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China and Novel Semiconductor Material Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| 摘 要： | 制备了4种具有不同光窗口台面结构的4H-SiC紫外探测器#1,#2,#3和#4,并分别测试它们的紫外光响应谱.器件制备在4H-SiC同质外延层上,台面为垂直结构,其中探测器#1光窗口区由透明Pt层、p+层、p层、n层和n+衬底组成.在探测器#1的基础上用离子刻蚀的方法分别剥离透明Pt层、透明Pt层和p+层、透明Pt层和层以及p层制备出探测器#2,#3和#4.器件的紫外光响应谱表明,紫外响应率最好的是探测器#2,其次是探测器#4,#1,#3,其中探测器#2比其他类型的探测器响应率高1个数量级;4种类型的探测器峰值响应位置各不相同,其中探测器#1位于341nm处,探测器#2,#3和#4分别在312,305和297nm处.
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| 关 键 词： | 4H-SiC紫外探测器 台筒结构 光窗口 |
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