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Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots |
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| Authors: | I. L. Krestnikov A. V. Sakharov W. V. Lundin Yu. G. Musikhin A. P. Kartashova A. S. Usikov A. F. Tsatsul’nikov N. N. Ledentsov Zh. I. Alferov I. P. Soshnikov E. Hahn B. Neubauer A. Rosenauer D. Litvinov D. Gerthsen A. C. Plaut A. A. Hoffmann D. Bimberg |
| Affiliation: | 1. Ioffe Physicotechnical Institute, St. Petersburg, 194021, Russia 2. Laboratorium für Electronenmikroskopie der Universit?t Karlsruhe, Postfach 6980, D-76128, Karlsruhe, Germany 3. Exeter University, Stocker Road, Exeter, EX44QL, UK 4. Institut für Festk?rperphysik, Technische Universit?t Berlin, D-10623, Berlin, Germany |
| Abstract: | InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (～ 105 cm?1) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm2. |
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