| 基于双绝缘层低电压n-型OFET的研制 |
| |
| 引用本文： | 周建林,张福甲.基于双绝缘层低电压n-型OFET的研制[J].光电子．激光,2008,19(12). |
| |
| 作者姓名： | 周建林 张福甲 |
| |
| 作者单位： | 兰州大学物理科学与技术学院,甘肃,兰州,730000 |
| |
| 基金项目： | 国家自然科学基金
|
| |
| 摘 要： | 采用顶接触结构研制了以Ta2O5/PMMA为绝缘层,有机材料PTCDI-C12为有源层的低电压n型有机场效应晶体管.其中Ta2O5薄膜采用阳极氧化方法制备,PMMA薄膜通过溶液旋涂法制备.与基于单一Ta2O5绝缘层的器件相比,双绝缘层器件的电学性能大幅提高.经测试得到器件场效应电子迁移率为0.063 cm2/Vs,开关电流比为1.7×104,阈值电压为2.3 V.
|
| 关 键 词： | 有机场效应晶体管(OFET) 双绝缘层 n型 |
Low voltage n-type OFET based on double insulators |
| |
| ZHOU Jian-lin,ZHANG Fu-jia.Low voltage n-type OFET based on double insulators[J].Journal of Optoelectronics·laser,2008,19(12). |
| |
| Authors: | ZHOU Jian-lin ZHANG Fu-jia |
| |
| Affiliation: | ZHOU Jian-lin,ZHANG Fu-jia(School of Physics Science , Technology,Lanzhou University,Gansu,Lanzhou 730000,China) |
| |
| Abstract: | A kind of top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulator and PTCDI-C12 as the semiconductor active layer.The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using spin-coating method.Compared to the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance.It has the filed-effect electron mobility of ... |
| |
| Keywords: | PTCDI-C12 |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《光电子．激光》浏览原始摘要信息 |
|
点击此处可从《光电子．激光》下载全文 |
|
