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Interface state and energy level alignment of F4-TCNQ sandwiched between a pentacene film and the ethylene-terminated Si(1 0 0) surface
Affiliation:1. Department of Orthopaedic Surgery, Kobe City Medical Center General Hospital, 2-1-1 Minatojima-Minamimachi, Chuo-ku, Kobe 650-0047, Japan;2. Department of Orthopaedic Surgery, Kyoto University, 54 Shogoin Kawahara-cho, Sakyo-ku, Kyoto 606-8507, Japan;3. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan;1. Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany;2. Department of Electrical Engineering, I.I.T. Madras, Chennai 600036, India;3. Physics Department, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU England, United Kingdom;1. College of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, China;2. Department of Polymer Materials, Zhejiang Sci-Tech University, Hangzhou, 310018, China;3. Institute of Smart Biomedical Materials, Zhejiang Sci-Tech University, Hangzhou, 310018, China
Abstract:
Keywords:Organic semiconductor  Charge transfer  Energy level alignment  Interface state
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