Flexible organic field-effect transistors based on electrospun conjugated polymer nanofibers with high bending stability |
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| Affiliation: | 1. Center for Biomolecular Nanotechnologies @UNILE, Istituto Italiano di Tecnologia, via Barsanti, I-73010 Arnesano, LE, Italy;2. National Nanotechnology Laboratory of Istituto Nanoscienze-CNR, Università del Salento, via Arnesano, I-73100 Lecce, Italy;3. Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, via Arnesano, I-73100 Lecce, Italy;1. Centre for Information and Communication Technology, Indian Institute of Technology (IIT), Jodhpur 342011, India;2. Max Planck Institute for Solid State Research, Heisenbergstr. 1, Stuttgart 70569, Germany;3. Department of Applied Chemistry, Hiroshima University, Higashi-Hiroshima 739-8527, Japan;4. Center for Emergent Matter Science (CEMS), RIKEN, Wako, Saitama 351-0198, Japan;1. Nexans Research Center, 29 rue du Pré Gaudry, 69353 Lyon Cedex 07, France;2. Nexans Research Center, Sieboldstraße 10, 90411 Nürnberg, Germany;1. Institut für Angewandte Photophysik, George-Bähr-Strasse 1, 01062 Dresden, Germany;2. Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan;3. Department of Imaging System Engineering, Pukyong National University, Busan 608-737, Republic of Korea;4. OLED Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, South Korea;5. SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, UK;1. Università di Perugia, Dipartimento di Ingegneria Civile e Ambientale, Strada di Pentima 4, INSTM, UdR Perugia, 05100 Terni, Italy;2. Instituto de Ciencia y Tecnologia de Polimeros, CSIC, Juan de la Cierva, 3, 28006 Madrid, Spain;1. Shanghai Fire Research Institute of Ministry of Public Security, 918 Minjing Road, Shanghai, China;2. Shanghai Institute of Forensic Sciences, 803 Zhongshan North 1 Road, Shanghai, China;1. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea;2. Department of Polymer Science and Engineering, Inha University, Incheon 402-751, South Korea |
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| Abstract: | We report on flexible, single electrospun nanofiber field-effect transistors made by a blend of poly(3-decylthiophene) and poly(3-hexylthiophene), assessing for the first time the performances of this class of devices in terms of stability upon repeated tensile bending. Charge-carrier mobilities in the nanofiber-based device are estimated of the order of 10−3 cm2/(V s). Repeated cycles of bending and relaxing are performed, and the evolution of the device current–voltage characteristics is monitored up to 1000 cycles. We find that during bending the mobility is higher than that measured in planar conditions, and that after about 100 bending cycles it rapidly stabilizes. The here observed bending stability suggests a high compatibility of electrospun nanofibers with devices fabricated by roll-to-roll processes, and with bendable or wearable electronics. |
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| Keywords: | Polymer nanofibers Electrospinning Plastic electronics Flexible electronics Poly(alkylthiophene)s |
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