High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths |
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| Affiliation: | 1. Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, Japan;2. The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, Sakai 599-8531, Japan;1. Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196, Japan;2. Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan;3. Research Center for Advanced Eco-fitting Technology, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196, Japan;1. POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;2. School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 156-756, Republic of Korea;3. Department of Nano, Medical and Polymer Materials, Yeungnam University, Gyeongsan 712-749, Republic of Korea |
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| Abstract: | ![]()
The device characteristics of top-gate field-effect transistors (FETs) based on typical polymer semiconductor regioregular poly(3-alkylthiophenes) (P3ATs) with different alkyl chain lengths are investigated. High field-effect mobilities of ∼10−2 cm2/Vs are obtained irrespective of alkyl chain length even when polymer gate insulators with different dielectric constants (2.1–3.9) are used. This is attributed to the spontaneous formation of highly ordered edge-on lamellar structures at the surface of P3AT thin films that are the channel regions in top-gate FETs. In addition, top-gate P3AT FETs containing different gate insulators exhibit high operational stability, with low threshold voltage shifts of <0.5 V following prolonged gate bias stress, which is comparable to that of hydrogenated amorphous silicon thin film transistors. |
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| Keywords: | Organic field-effect transistors Poly(3-alkylthiophene) Top-gate configuration CYTOP Poly(4-chlorostyrene) Poly(methyl methacrylate) |
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