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High responsivity silicon MOS phototransistors
Authors:Kamran AbidAuthor VitaeAli Z. KhokharAuthor Vitae  Faiz RahmanAuthor Vitae
Affiliation:School of Engineering, Optoelectronics Group, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 9LT, United Kingdom
Abstract:
We describe a metal-oxide silicon (MOS) phototransistor that relies on a novel lateral doping scheme that creates a p-i-n junction configuration for light detection. This is essentially a hybrid device with the horizontal structure of a p-i-n diode and the vertical structure of a MOS field-effect transistor. The lateral p-i-n diode detects light whereas the gate can be used to change the current flowing through the device; making it appear as a MOSFET. This feature makes it easy to integrate it with other conventional MOSFETs on a CMOS process flow. The device shows high optical responsivities that persist to wavelengths in the near-ultraviolet region. The fabrication of the device as well as its electrical and optical characteristics is described.
Keywords:Photodiodes   Phototransistors   Silicon light detector   Photo MOSFET
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