Dynamical simulations of zone axis electron channelling patterns of cubic silicon carbide

We have observed and simulated energy-dependent intensity distributions in electron channelling patterns (ECP) of cubic silicon carbide (3C SiC) which were recorded close to the (111) zone axis. The kinetic energies used were in the range from 4 to 8 keV, covering the low-energy region of the ECP technique. We explain the observed patterns by dynamical many beam simulations using a bloch wave approach for the diffraction of the incoming beam and the forward-backward-approximation for the backscattering of the electrons. The dynamical simulations reproduce the experimental patterns very well. It is found that higher-order Laue zone reflections are responsible for the strong energy sensitivity of the intensity distributions.