Precursor-Derived Si-B-C-N Ceramics: Oxidation Kinetics |
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| Authors: | Elke Butchereit,Klaus G. Nickel ,Anita Mü ller |
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| Affiliation: | Eberhard-Karls-Universität Tübingen, Institut für Mineralogie, Petrologie und Geochemie, 72074 Tübingen, Germany;Institut für Nichtmetallische Anorganische Materialien, Universität Stuttgart, Pulvermetallurgisches Laboratorium, 70569 Stuttgart, Germany |
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| Abstract: | The oxidation behavior of three precursor-derived ceramics—Si4.46BC7.32N4.40 (AMF2p), Si2.72BC4.51N2.69 (AMF3p), and Si3.08BC4.39N2.28 (T2/1p)—was investigated at 1300° and 1500°C. Scale growth at 1500°C in air can be approximated by a parabolic rate law with rate constants of 0.0599 and 0.0593 μm2/h for AMF3p and T2/1p, respectively. The third material does not oxidize according to a parabolic rate law, but has a similar scale thickness after 100 h. The results show that at least within the experimental times these ceramics develop extremely thin scales, thinner than pure SiC or Si3N4. |
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| Keywords: | precursors oxidation kinetics |
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