| 激光诱导SiH4等离子体反应碎片的产生机制 |
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| 引用本文： | 张贵银,姜根山.激光诱导SiH4等离子体反应碎片的产生机制[J].四川激光,1999,20(5):57-58. |
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| 作者姓名： | 张贵银 姜根山 |
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| 作者单位： | 华北电力大学基础科学系!保定071003 |
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| 摘 要： | 本工作利用光学发射光谱技术对ＴＥＡＣＯ２激光诱导ＳｉＨ４等离子体反应碎片的时间特性进行了测量，分析了碎片的产生和反应机制。提出碎片Ｓｉ，Ｓｉ＾＋等主要为一级反应产物，Ｓｉ２，ＳｉＨ等主要为二级的产物的结论。对Ｓｉ３９０．６ｍｍ，ＳｉＨ４１２．８ｍｍ谱线随实验条件变化的测量，进一步验证了我们的结果。
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| 关 键 词： | SiH4激光等离子体 反应碎片 产生机制 |
Study on production process of fragment in SiH4 plasma induced by TEA CO2 laser |
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| Zhang Guiyin,Jiang Genshan.Study on production process of fragment in SiH4 plasma induced by TEA CO2 laser[J].Laser Journal,1999,20(5):57-58. |
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| Authors: | Zhang Guiyin Jiang Genshan |
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| Abstract: | Using the technique of optical emission spectroscopy,time dependence of fragment in SiH 4 laser plasma is measured.After analyzing the evolution and reaction progress of fragments,we proposed that si.H and si were the first reaction products,but Si 2 SiH and Si 2 the second ones.This conclusion is further verified by the experimental results of Si390.6nm and SiH412.8nm emission lines in various conditions. |
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| Keywords: | SiH_4 laser plasma fragment production mechanism |
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