| 高压RESURF LDMOS开态击穿模型 |
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| 引用本文： | 方健,易坤,李肇基,张波. 高压RESURF LDMOS开态击穿模型[J]. 半导体学报, 2005, 26(3): 436-442 |
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| 作者姓名： | 方健 易坤 李肇基 张波 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054 |
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| 摘 要： | 建立了高压RESURF LDMOS的开态击穿模型.该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响,获得了开态下LDMOS漂移区中的电场分布.基于该模型可以计算出高压 RESURF LDMOS的电学SOA.数值模拟和实验结果部分验证了模型的正确性.该模型有助于深入理解LDMOS开态击穿的物理过程,可用于指导高压LDMOS的设计.
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| 关 键 词： | LDMOS 安全工作区 击穿电压 |
On-State Breakdown Model for High Voltage RESURF LDMOS |
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| Fang Jian,Yi Kun,Li Zhaoji,Zhang Bo. On-State Breakdown Model for High Voltage RESURF LDMOS[J]. Chinese Journal of Semiconductors, 2005, 26(3): 436-442 |
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| Authors: | Fang Jian Yi Kun Li Zhaoji Zhang Bo |
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| Abstract: | An analytical breakdown model under on-state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n-drift in LDMOS at on-state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design. |
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| Keywords: | LDMOS safe operating area breakdown voltage |
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