| 在n型硅基底上二次注入硼离子金刚石膜的p-n结效应 |
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| 引用本文： | 孙秀平,冯克成,李超,张红霞,费允杰.在n型硅基底上二次注入硼离子金刚石膜的p-n结效应[J].半导体学报,2005,26(6). |
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| 作者姓名： | 孙秀平 冯克成 李超 张红霞 费允杰 |
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| 作者单位： | 1. 长春理工大学,长春,130022
2. 中国科学院物理研究所,北京,100080 |
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| 摘 要： | 在n型Si衬底上用热丝化学气相沉积方法制备了多晶金刚石膜,用200keV的离子注入机在金刚石膜中进行了二次硼离子注入,第一次注入能量为70keV,第二次注入能量为120keV,获得了硼离子的均匀分布,测试了样品的I-V特性,发现其具有明显的p-n异质结效应.
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| 关 键 词： | 离子注入 金刚石膜 异质结 |
Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects |
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| Sun Xiuping,Feng Kecheng,Li Chao,Zhang Hongxia,Fei Yunjie.Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects[J].Chinese Journal of Semiconductors,2005,26(6). |
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| Authors: | Sun Xiuping Feng Kecheng Li Chao Zhang Hongxia Fei Yunjie |
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| Abstract: | Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition, and then are implanted with boron ions in a 200keV ion implanter. In order to achieve a better distribution of the implanted element, boron ions are implanted by two steps: implanting boron ions with the energy of 70keV first,and then with the energy of 100keV. The homogeneous distribution of the B ion is gained. The current-voltage characteristics of the samples are studied. It is found that the p-n heterojunction effect is achieved in these samples. |
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| Keywords: | ion implantation diamond film p-n junction |
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