| GaN基蓝紫光激光器的材料生长和器件研制 |
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| 引用本文： | 杨辉,陈良惠,张书明,种明,朱建军,赵德刚,叶小军,李德尧,刘宗顺,段俐宏,赵伟,王海,史永生,曹青,孙捷,陈俊,刘素英,金瑞琴,梁骏吾.GaN基蓝紫光激光器的材料生长和器件研制[J].半导体学报,2005,26(2). |
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| 作者姓名： | 杨辉 陈良惠 张书明 种明 朱建军 赵德刚 叶小军 李德尧 刘宗顺 段俐宏 赵伟 王海 史永生 曹青 孙捷 陈俊 刘素英 金瑞琴 梁骏吾 |
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| 作者单位： | 1. 中国科学院半导体研究所,集成光电子学国家重点联合实验室,北京,100083
2. 中国科学院半导体研究所,纳米光电子学实验室,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 报道了国内首次研制成功的GaN基蓝紫光激光器的材料外延生长、器件工艺和特性.用MOCVD生长了高质量的GaN及其量子阱异质结材料,以及异质结分别限制量子阱激光器结构材料.GaN材料的X射线双晶衍射摇摆曲线(0002)对称衍射和(10(-1)2)斜对称衍射半宽分别为180″和185″;3μm厚GaN薄膜室温电子迁移率达到850cm2/(V·s).基于以上材料,分别成功研制了室温脉冲激射增益波导和脊型波导激光器,阈值电流密度分别为50和5kA/cm2,激光发射波长为405.9nm,脊型波导结构激光器输出光功率大于100mW.
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| 关 键 词： | 有机化学气相沉积 GaN基激光器 多量子阱 脊形结构 阈值电流密度 |
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes |
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| Yang Hui,Chen Lianghui,Zhang Shuming,Chong Ming,Zhu Jianjun,Zhao Degang,Ye Xiaojun,Li Deyao,LIU Zongshun,Duan Lihong,Zhao Wei,Wang Hai,Shi Yongsheng,Cao Qing,Sun Jie,Chen Jun,Liu Suying,Jin Ruiqin,Liang Junwu.Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes[J].Chinese Journal of Semiconductors,2005,26(2). |
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| Authors: | Yang Hui Chen Lianghui Zhang Shuming Chong Ming Zhu Jianjun Zhao Degang Ye Xiaojun Li Deyao LIU Zongshun Duan Lihong Zhao Wei Wang Hai Shi Yongsheng Cao Qing Sun Jie Chen Jun Liu Suying Jin Ruiqin Liang Junwu |
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| Abstract: | Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes. |
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| Keywords: | metalorganic chemical vapor deposition GaN-based laser diodes multiple quantum wells ridge geometry structure threshold current density |
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