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| 基于渐变组分体材料InGaAs的宽带长波长超辐射二极管 | |
| 引用本文： | 丁颖,王圩,阚强,王宝军,周帆. 基于渐变组分体材料InGaAs的宽带长波长超辐射二极管[J]. 半导体学报, 2005, 26(12): 2309-2314 |
| 作者姓名： | 丁颖 王圩 阚强 王宝军 周帆 |
| 作者单位： | 中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083;中国科学院半导体研究所,光电子研发中心,北京,100083 |
| 摘 要： | 研制了一种新型的非选择性再生长掩埋异质结构长波长超辐射二极管(SLD).该器件采用渐变组分体材料InGaAs作为有源区,由金属有机物化学气相外延制备.150mA下,SLD发射谱宽的半高全宽为72nm,覆盖范围从1602到1674nm.发射谱光滑、平坦,光谱波纹在1550到1700nm的范围内小于0.3dB.室温连续工作,注入电流200mA下,器件获得了4.3mW的出光功率.器件适用于气体探测器和L-band光纤通信的光源. |
| 关 键 词： | 宽带 超辐射二极管 渐变组分 掩埋异质结构 |
| 收稿时间： | 2015-08-19 |
A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs |
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| Ding Ying, Wang Wei, Kan Qiang, Wang Baojun, Zhou Fan. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Journal of Semiconductors, 2005, In Press. Ding Y, Wang W, Kan Q, Wang B J, Zhou F. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Chin. J. Semicond., 2005, 26(12): 2309.Export: BibTex EndNote | |
| Authors: | Ding Ying Wang Wei Kan Qiang Wang Baojun Zhou Fan |
| Affiliation: | Center of Optoelectronics Research & Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Optoelectronics Research & Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Optoelectronics Research & Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Optoelectronics Research & Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Optoelectronics Research & Development,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| Abstract: | A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE). At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications. |
| Keywords: | broadband superluminescent diodes graded composition buried hetero-structure |
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