Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes |
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| Authors: | J. P. R. David R. Grey M. A. Pate P. A. Claxton J. Woodhead |
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| Affiliation: | (1) Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD Sheffield, UK |
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| Abstract: | A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures (< 2 × 10−4 A/cm2 @ 0.9 V BD ) with a high degree of strain (∼2%) have been produced. An important factor affecting the leakage for a fixed well composition and dimension is found to be the barrier width. |
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| Keywords: | III-V Semiconductors strained layer semiconductors diode leakage currents |
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