Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography |
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| Affiliation: | 1. JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Leonhardstrasse 59, 8010 Graz, Austria;2. Swiss Center for Electronics and Microtechnology, CSEM SA, Tramstrasse 99, 4132 Muttenz, Switzerland;3. Obducat Technologies AB, Scheelevägen 2, SE-223 63 Lund, Sweden;4. Fraunhofer EMFT, Hansastrasse 27 d, 80686 München, Germany;5. imec, Kapeldreef 75, B-3001 Leuven, Belgium;6. Institute of Mechanical and Manufacturing Engineering, Cardiff University, Cardiff CF24 3AA, Wales, UK;7. BASF Schweiz AG, Areal Rosental, Schwarzwaldallee 215, 4057 Basel, Switzerland;8. Graz Centre for Electron Microscopy and Institute for Electron Microscopy and Nanoanalysis, TU Graz, Steyrergasse 17, 8010 Graz, Austria;1. Institute of Mineralogy and Petrography, University of Innsbruck, Innrain 52f, 6020 Innsbruck, Austria;2. MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Straße 30, 8160 Weiz, Austria;3. Institute for Structural Engineering and Material Sciences, Material Technology Innsbruck, University of Innsbruck, Technikerstr. 11/19a, 6020 Innsbruck, Austria;4. MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH Forschungsgesellschaft mbH, Leobner Straße 94, 8712 Niklasdorf, Austria;1. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China;2. Shaanxi Key Laboratory of Electrical Materials and Infiltration Technology, Xi’an 710048, China;3. School of Biological and Chemical Engineering, Panzhihua University, Panzhihua 617000, China;1. Institute of Photonic System, National Chiao Tung University, Tainan 71150, Taiwan;2. Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;3. Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, Hsinchu 30010, Taiwan;4. Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan;1. Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;2. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan;3. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan;4. Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan |
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| Abstract: | Many applications that rely on organic electronic circuits still suffer from the limited switching speed of their basic elements – the organic thin film transistor (OTFT). For a given set of materials the OTFT speed scales inversely with the square of the channel length, the parasitic gate overlap capacitance, and the contact resistance. For maximising speed we pattern transistor channels with lengths from 10 μm down to the sub-micrometre regime by industrially scalable UV-nanoimprint lithography. The reduction of the overlap capacitance is achieved by minimising the source–drain to gate overlap lengths to values as low as 0.2 μm by self-aligned electrode definition using substrate reverse side exposure. Pentacene based organic thin film transistors with an exceptionally low line edge roughness <20 nm of the channels, a mobility of 0.1 cm2/Vs, and an on–off ratio of 104, are fabricated on 4″ × 4″ flexible substrates in a carrier-free process scheme. The stability and spatial distribution of the transistor channel lengths are assessed in detail with standard deviations of L ranging from 185 to 28 nm. Such high-performing self-aligned organic thin film transistors enabled a ring-oscillator circuit with an average stage delay below 4 μs at an operation voltage of 7.5 V. |
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| Keywords: | OFET Short channel OTFT NIL Self-alignment LER Ring-oscillator |
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