Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture |
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| Affiliation: | 1. Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 565-905, Republic of Korea;2. Department of Polymer-Nano Science and Technology, Chonbuk National University, 664-14 Duckjin-dong, Duckjin-gu, Jeonju 561-756, Republic of Korea;3. Current Address: Department of Chemistry, Rice University, 6100 Main Street, Houston, TX 77005, USA;1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China;2. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;3. University of Chinese Academy of Sciences, Beijing 100039, PR China;1. Department of Chemistry, Shantou University, Guangdong 515063, China;2. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region;3. Department of Chemistry, South University of Science and Technology of China, Shenzhen 518055, China;4. 4/F R&D Building, Skyworth Science Park, Tangtou Industrial Zone, Shiyan Town, Baoan District, Shenzhen, China;1. Department of Physics and Astronomy, London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, UK;2. Istituto per la Sintesi Organica e la Fotoreattività, Centro Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna 40129, Italy;3. BASF SE, Carbon Materials Innovation Center, Ludwigshafen 67056, Germany;1. Department of Clinical Pharmacy, School of Pharmacy, College of Pharmacy, Taipei Medical University, Taipei, Taiwan;2. Department of Green Material Technology, Green Technology Research Institute, Chinese Petroleum Corporation (CPC Corporation), Kaohsiung, Taiwan;3. Department of Mechanical and Automation Engineering, I-Shou University, Kaohsiung, Taiwan;4. Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, Kaohsiung, Taiwan |
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| Abstract: | We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ～103 ION/IOFF ratio, stable endurance cycles (102 cycles) and retention times (104 s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ～3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code. |
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| Keywords: | Nonvolatile memory Organic resistive memory ZnO–Graphene quantum dot One diode-one resistor architecture |
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