Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices

This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi-trenched XtreMOS^TM devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is collected through on-chip sensors and through a full surface high resolution transient interferometric mapping (TIM). For the first time a data driven segmented electro-thermal transient model is proposed to accurately describe the thermal profile behavior for the mutli-trenched devices. Further investigations of the thermal heating impact on the driver due to the low thermal conductivity of the trenches (SiO₂) have been carried out. The results of the investigations have been discussed for two different gate to source (VGS) bias conditions: VGS below the temperature compensation point (TCP), which is a bias condition that might lead to a thermal runaway, and VGS above TCP.