Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition |
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| Authors: | Yang Li Yinzhu Zhang Haiping He Zhizhen Ye Jie Jiang Jianguo Lu Jingyun Huang |
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| Affiliation: | 1. DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, Pretoria 0001, South Africa;2. Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050, South Africa;3. DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Johannesburg, Wits 2050, South Africa;4. Department of Physics and Biochemical Sciences, University of Malawi, The Polytechnic, Private Bag 303, Chichiri, Blantyre 3, Malawi;1. Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;2. Department of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan;3. Department of Optoelectronics Engineering, National Yunlin University of Science and Technology, Douliou 64002, Taiwan;4. Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan |
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| Abstract: | ![]()
Non-polar ZnO thin films were deposited on m-plane sapphire substrates by pulsed laser deposition at various temperatures from 300 to 700 °C. The effects of growth temperature on surface morphology, structural, electrical, and optical properties of the films were investigated. All the films exhibited unique m-plane orientation indicated by X-ray diffraction and transmission electron microscopy. Based on the scanning electron microscopy and atomic force microscopy, the obtained films had smooth and highly anisotropic surface, and the root mean square roughness was less than 10 nm above 500 °C. The maximum electron mobility was ～18 cm2/V s, with resistivity of ～0.26 Ω cm for the film grown at 700 °C. Room temperature photoluminescence of the m-plane films was also investigated. |
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