Room temperature novel chemical synthesis of Cu2ZnSnS4 (CZTS) absorbing layer for photovoltaic application |
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| Authors: | NM Shinde DP Dubal DS Dhawale CD Lokhande JH Kim JH Moon |
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| Affiliation: | 1. Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S), India;2. Department of Materials Science and Engineering, Chonnam National University, South Korea;1. Optoelectronics Convergence Research Center, Department of Materials Science and Engineering, Chonnam National University, 300, Yongbong-Dong, Buk-Gu, Gwangju 500-757, South Korea;2. Department of Mechanical Engineering, Yonsei University, Seoul, South Korea;3. Korean Institute of Energy Research (KIER), Daejeon 305-343, South Korea;1. Optoelectronics Convergence Research Center, Department of Materials Science & Engineering, Chonnam National University, Gwangju 500 757, South Korea;2. ICT Convergence Research Center for Smart Appliances, Department of Electronics & Computer Engineering, Chonnam National University, Gwangju 500 757, South Korea;3. Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, M.S., India;4. Applied Optics & Energy Research Group, Korea Institute of Industrial Technology, Gwangju 500 480, South Korea;1. Thin Film Nano-Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, India;2. Material Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur, India;3. Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300, Yongbong-Dong, Buk-Gu, Gwangju 500-757, South Korea;1. Department of Physics, St. Joseph’s College, Tiruchirappalli, Tamil Nadu, India;2. Department of Electrical and Electronics Engineering, MAM College of Engineering, Trichirappalli, Tamil Nadu, India |
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| Abstract: | Cu2ZnSnS4 (CZTS) thin films have been prepared by a novel chemical successive ionic layer adsorption and reaction (SILAR) method. These films were annealed in vacuum at 673 K and further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopy, electrical, and wettability studies. The X-ray diffraction studies showed the formation of kesterite structure of CZTS films. Scanning electron micrograph revealed the formation of densely packed, compact and large grained CZTS films. The CZTS films showed high optical absorption (104 cm?1) exhibiting band gap energy of 1.55 eV. Wettability test revealed the hydrophilic nature of CZTS films. The CZTS thin films showed semiconducting behavior with p-type electrical conductivity. Further photovoltaic activity of these films was studied by forming the photoelectrochemical cell. |
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