Low-temperature low-pressure die attach with hybrid silver particle paste |
| |
Authors: | K Suganuma S Sakamoto N Kagami D Wakuda K-S Kim M Nogi |
| |
Affiliation: | ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| |
Abstract: | New types of die attach pastes comprising micron-sized Ag particles hybridized with submicron-sized Ag particles were considered as lead-free die attach materials for SiC power semiconductors. Micron-sized Ag particles in alcohol solvent were prepared by mixing the die attach paste with submicron-sized Ag particles. The alcohol vaporizes completely during sintering and no residue exists in the bonding layer. The Ag layer has a uniform porous structure. The electrical resistivity of the printed tracks decreases below 1 × 10?5 Ω cm when sintered above 200 °C. When sintered at 200 °C for 30 min, the average resistivity reaches 5 × 10?6 Ω cm, which is slightly higher than the value obtained by using Ag nanoparticle paste. A SiC die was successfully bonded to a direct bonded copper substrate and the die-shear strength gradually increases with the increase in bonding temperature up to 300 °C. The Ag die attach bond layer was stable against thermal cycles between ?40 °C and 300 °C. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|