Effects of working pressure on morphology,structural, electrical and optical properties of a-InGaZnO thin films |
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| Authors: | Anup Thakur Se-Jun Kang Jae Yoon Baik Hanbyeol Yoo Ik-Jae Lee Han-Koo Lee Seonghoon Jung Jaehun Park Hyun-Joon Shin |
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| Affiliation: | 1. Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC;2. Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC;1. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China;2. Suzhou Institute of Shandong University, Suzhou 215123, China;3. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom;1. Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh, Viet Nam;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;3. Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh, Viet Nam;4. School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan |
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| Abstract: | Amorphous In–Ga–Zn–O (a-IGZO) thin films (～200 nm thickness) were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates at various working pressures (0.67–2.67 Pa) and a fixed oxygen-to-argon gas-flow ratio (O2/Ar = 5%). The transparency of all of the films was more than 85% in the visible range. With increased working pressure, the surface morphology of the films, as observed under atomic force microscopy (AFM), became rough; the optical band gap, estimated by Tauc plot, increased, and the mobility and carrier concentrations, according to Hall measurement, decreased and increased, respectively. The resistivity of the films initially decreased (up to 2.00 Pa working pressure) and then increased (at 2.67 Pa). It is suggested that the electrical property changes were affected by the role of the oxygen vacancies, whether as effective donors or as scattering centers. |
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