Diamond nanoseeding on silicon: Stability under H2 MPCVD exposures and early stages of growth |
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| Authors: | JC Arnault S Saada M Nesladek OA Williams K Haenen P Bergonzo E Osawa |
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| Affiliation: | 1. CEA DSM-DRECAM-SPCSI, CEA Saclay Gif sur Yvette, France;2. CEA LIST, CEA Saclay Gif sur Yvette, France;3. Institute for Materials Research (IMO), Hasselt University, B-3590 Diepenbeek, Belgium;4. Division IMOMEC, IMEC vzw, Diepenbeek, B-3590 Belgium;5. NanoCarbon Research Institute, Ltd., Asama Research Extension Centre, Shinshu University, Japan |
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| Abstract: | Detonation nanodiamond dispersed on silicon surfaces underwent different H2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp3 etching rate is insufficient to remove nanodiamond even under intense H2 plasma. The H2 exposure could be successfully used to remove C–C sp2 carbon without altering sp3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate. |
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