| S波段宽带微波固态功率放大器的设计 |
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| 引用本文： | 程光伟,赵文.S波段宽带微波固态功率放大器的设计[J].西安工业大学学报,2012(3):226-230. |
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| 作者姓名： | 程光伟 赵文 |
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| 作者单位： | 西安工业大学电子信息工程学院,西安710032 |
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| 摘 要： | 微波功率放大器是发射机的重要组件,它的设计成了微波发射系统的关键.文中使用ADS仿真软件对一款功率放大器进行电路设计和仿真,根据晶体管的小信号S参数和I-V曲线,对功率管的输入、输出阻抗匹配电路及其偏置电路进行优化设计,使其性能达到设计要求.在2～2.5GHz的频段内,对输入功率为0dBm射频信号,使用功放模块可以输出40dBm的射频信号,带内波动≤±1.5dB.
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| 关 键 词： | 宽带 横向扩散金属氧化物半导体 微波功率放大器 功率回退 |
Design of S-band Wideband Microwave Solid State Power Amplifier |
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| Authors: | CHENG Guang-wei ZHAO Wen |
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| Affiliation: | (School of Electronic Information Engineering,Xi＇an Technological University,Xi＇an 710032,China) |
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| Abstract: | An microwave power amplifier is the key component of transmitters.Its design becomes the most important.The ADS simulation software was used to design and simulate a power amplifier.According to transistor＇s small signal S parameters and I-V curves,an optimized design is made of the power tube＇s input and output impedance match circuit and its bias circuit making its performance to achieve the requirements.With the 2～2.5 GHz frequency band,the radio frequency signal with odbm input power can be output 40 dBm by using a power amplifier module,and its fluctuation band is equal to and less than ±1.5 dB. |
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| Keywords: | wideband laterally diffused metal oxide semiconductor microwave power amplifier power back-off |
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