| TeO2晶体位错腐蚀形貌与晶体对称性 |
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| 引用本文： | 方雅珂,桑文斌,闵嘉华.TeO2晶体位错腐蚀形貌与晶体对称性[J].无机材料学报,2004,19(6):1419-1422. |
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| 作者姓名： | 方雅珂 桑文斌 闵嘉华 |
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| 作者单位： | 上海大学材料学院电子信息材料系,上海,201800 |
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| 摘 要： | 用化学腐蚀的方法研究TeO2晶体(110)面和(001)面位错蚀坑的形貌，结合晶面极图，并运用对称群理论进行分析论证，理论分析与实验结果相一致．实验结果同时显示，TeO2晶体位错腐蚀坑面由{110}面族构成，即{110}面族是晶体的习性面．
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| 关 键 词： | TeO2晶体 腐蚀 位错 对称性 |
| 文章编号： | 1000-324X(2004)06-1419-04 |
| 收稿时间： | 2003-9-22 |
| 修稿时间： | 2003-11-5 |
Etching Morphology and Symmetry of TeO2 Crystal |
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| FANG Ya-Ke,SANG Wen-Bin,MIN Jia-Hua.Etching Morphology and Symmetry of TeO2 Crystal[J].Journal of Inorganic Materials,2004,19(6):1419-1422. |
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| Authors: | FANG Ya-Ke SANG Wen-Bin MIN Jia-Hua |
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| Affiliation: | DepartmentofElectronicInformationMaterials;ShanghaiUniversity;Shanghai201800;China |
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| Abstract: | The etching morphologies of TeO2 crystal on (110) and (001) faces were observed by means of chemical etching and analyzed with the theory of symmetry group. The morphologies of etch pits are very special compared with the tetragonal system crystal with 422 point group. The morphologies of etch pits by theoretical analysis are in conformity with the experiment. It shows that the patterns of etch pits consist of {110} planes. It is clear that the habitual plane of crystal is {110} plane. |
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| Keywords: | TeO2 crystal etching dislocation symmetry |
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