磺化石墨烯及其导电炭薄膜的制备与性能

以石墨为原料, 采用Hummers法液相氧化合成了氧化石墨(GO), 通过低温真空剥离预还原、磺化反应、葡萄糖二次还原, 合成了高质量的磺化石墨烯(S-GNS), 有效避免了在此过程中石墨烯大量团聚的现象. 采用傅里叶变换红外(FTIR)光谱、X射线光电子能谱(XPS)、热重分析仪(TG)、X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和原子力显微镜(AFM)等分析手段对磺化石墨烯样品进行了表征. 实验结果表明: 对氨基苯磺酸成功地接枝到了石墨烯上, 磺化石墨烯还原彻底, 热稳定性能高; 石墨烯表面平整, 缺陷少; 单层磺化石墨烯厚度约为1.2 nm. 水溶性、分散性实验结果表明: 磺化石墨烯拥有高水溶性和高分散性. BET比表面积及电性能测试表明: 磺化石墨烯的比表面积高达806.4 m²/g, 薄膜材料的导电率为1150 S/m.

Synthesis and Characterization of Sulfonated Graphene and Conducting Films

Graphite oxide (GO) was prepared from graphite by Hummers liquid oxidation method and the sulfonated graphene (S-GNS) was then prepared by pre-reduction, sulfonation and post-reduction. Glucose was also used to reduce the agglomeration among the graphene layers. The as-prepared sulfonated graphene was characterized by Fourier transform infrared spectroscope (FT-IR), X-ray photoelectron spectroscope (XPS), Thermo- gravimetric analysis (TG), X-ray diffraction (XRD), Scanning electron microscope (SEM), Transmission electron microscope (TEM) and Atomic force microscope (AFM), respectively. The experimental results indicate that the graphene of the p-phenyl-SO₃H groups is successfully grafted into graphite oxide, and graphite oxide is completely reduced to sulfonated graphene. The sulfonated graphene possesses high thermal stability, smooth surface and few defects, and the thickness of single layer graphene is approximately 1.2 nm. Water solubility and dispersion results show that the sulfonated graphene can be dispersed into water with good water solubility. In addition, the BET specific surface area and the electrical conductivity of the sulfonated graphene film are up to 806.4 m²/g and 1150 S/m, respectively.