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Electronic structure of memory traps in silicon nitride

Authors:	V.A. Gritsenko S.S. Nekrashevich V.V. Vasilev A.V. Shaposhnikov

Affiliation:	1. Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Republic of Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 16419, Republic of Korea;3. Department of Physics, Dongguk University, Seoul 04620, Republic of Korea;4. Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea;5. Business Support Department, Gumi Electrons & Information Technology Research Institute, Gumi 730-853, Republic of Korea

Abstract:	From experiments on photoluminescence in Si₃N₄ the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si₃N₄.

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