Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon |
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| Authors: | Mossadeq H. Bennett R.J. Anand K.V. |
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| Affiliation: | University of Kent at Canterbury, Electronics Laboratories, Canterbury, UK; |
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| Abstract: | The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C. |
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