InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm |
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| Authors: | Huang J Y Liang H C Su K W Lai H C Chen Y-F Huang K F |
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| Affiliation: | Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. |
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| Abstract: | A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. |
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