Low threshold InGaAs/GaAs 45° folded cavity surface-emittinglaser grown on structured substrates |
| |
Authors: | Frateschi NC Dapkus PD Ou SS Yang JJ Jansen M |
| |
Affiliation: | Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA; |
| |
Abstract: | A novel folded cavity surface-emitting laser structure integrating a horizontal cavity InGaAs/GaAs laser grown on a structured substrate with a high reflectivity Bragg reflector has been fabricated. Devices with threshold currents of 8 mA and CW wall plug efficiencies at 5% at 6 mW output power have been demonstrated at a wavelength of 0.99 μm. By combining a cleaved uncoated mirror with the 45° deflecting mirror the authors have obtained threshold current as low as 5 mA for a device 450 μm long |
| |
Keywords: | |
|