980 nm diode laser for pumping Er3+-doped fiberamplifiers |
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| Authors: | Bour D.P. Dinkel N.A. Gilbert D.B. Fabian K.B. Harvey M.G. |
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| Affiliation: | David Sarnoff Res. Center, Princeton, NJ; |
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| Abstract: | ![]()
A high-power 980-nm diode laser, whose performance satisfies the requirements for pumping Er3+-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor-phase epitaxy and contains a strained, step-graded In0.25 Ga0.75As/AlGaAs single-quantum-well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW with a different quantum efficiency of 59% is demonstrated |
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