异质谷间转移电子器件工作模式的研究

运用依赖能量的异质界面δ散射势和多能谷有效质量方程计算了 Ga As/Al As异质结构中的能带混合和电子隧穿共振。结合能带混合隧穿共振理论和 Monte Carlo模拟计算 ,编制异质谷间转移电子器件的模拟软件。用该软件模拟了器件的直流伏安特性和射频工作。由模拟结果与测量结果的对比中确定出δ散射势参数和隧穿时间。通过模拟发现了新的弛豫振荡模式。研究了弛豫振荡模的各种振荡特性 ,给出了器件的优化设计

Study of Operation Mode for Heterostructure Intervalley Transferred Electron Devices

By using an energy dependent δ potential at the heteroconjunction interfaces and effective mass equation with many valleys, the band mixing and resonant tunneling in GaAs/AlAs heterostructure is calculated. A software to simulate the electron moving in heterostruc ture intervalley transferred electron devices is written down through the combination of energy band mixing theory and Monte Carlo simulation. The dc V I characteristic and rf operation process are calculated by this software. We determine the δ potential parameter and the tunne ling time through heterostructure from the comparison between the simulation result and measurement data. A new relaxation oscillation mode is found through the dynamic simulation. Many oscillation characteristics of the relaxation mode are investigated, from which an optimized design is given.