Hot-carrier-stress effects on gate-induced drain leakage current inn-channel MOSFETs

The effects of hot-carrier stress on gate-induced drain leakage (GIDL) current in n-channel MOSFETs with thin gate oxides are studied. It is found that the effects of generated interface traps (ΔD _it) and oxide trapped charge on the GIDL current enhancement are very different. Specifically, it is shown that the oxide trapped charge only shifts the flat-band voltage, unlike ΔD _it. Besides band-to-band (B-B) tunneling, ΔD _it introduces an additional trap-assisted leakage current component. Evidence for this extra component is provided by hole injection. While trapped-charge induced leakage current can be eliminated by a hole injection subsequent to stress, such injection does not suppress interface-trap-induced leakage current