Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon |
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| Authors: | Bau-Ming Wang Yewchung Sermon Wu |
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| Affiliation: | (1) Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300, Taiwan, ROC |
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| Abstract: | Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors.
However, the NILC process often leads to Ni and NiSi2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped
amorphous Si. After annealing at 550°C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency
of amorphous Si. |
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| Keywords: | Ni gettering phosphorus dopant chemical oxide (chem-SiO2) |
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