| (Ni、Li)掺杂ZnO薄膜的制备及其性能 |
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| 引用本文： | 宋海岸,叶小娟,钟伟,都有为.(Ni、Li)掺杂ZnO薄膜的制备及其性能[J].微纳电子技术,2008,45(12). |
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| 作者姓名： | 宋海岸 叶小娟 钟伟 都有为 |
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| 作者单位： | 南京大学南京微结构国家实验室,南京,210093 |
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| 基金项目： | 国家自然科学基金
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国家重点基础研究发展计划(973计划)
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| 摘 要： | 采用溶胶-凝胶技术和旋涂的方法,在Si(100)衬底上制备了Ni掺杂和(Ni、Li)共掺的3种ZnO薄膜(Ni0.10Zn0.90O、Ni0.10Li0.05Zn0.85O和Ni0.10Li0.10Zn0.80O)。X射线衍射分析表明,所有薄膜样品均为纤锌矿结构,未发现其他杂相。光致发光研究表明,(Ni、Li)共掺后出现了410nm左右的紫外发光峰,并随Li浓度的增加发光峰变强,该峰与Li杂质能级有关,同时观察到O2-空位引起的610nm和740nm的两个红色发光峰。薄膜中Ni离子为+2价,取代Zn离子的位置。掺杂的ZnO薄膜呈现室温铁磁性,单个Ni原子的饱和磁矩可达到0.210μB,掺入Li或在N2气氛中退火后,都导致单个Ni原子的饱和磁矩降低。铁磁性来源于电子调制的机制。
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| 关 键 词： | 稀磁半导体 溶胶-凝胶 旋涂 铁磁性 光致发光 |
Fabrication and Properties of(Ni,Li) Doped ZnO Thin Films |
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| Song Haian,Ye Xiaojuan,Zhong Wei,Du Youwei.Fabrication and Properties of(Ni,Li) Doped ZnO Thin Films[J].Micronanoelectronic Technology,2008,45(12). |
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| Authors: | Song Haian Ye Xiaojuan Zhong Wei Du Youwei |
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| Affiliation: | Song Haian,Ye Xiaojuan,Zhong Wei,Du Youwei(Nanjing National Laboratory of Microstructures,Nanjing University,Nanjing 210093,China) |
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| Abstract: | Ni-doped and(Ni,Li)-co-doped ZnO thin films(Ni0.10Zn0.90O,Ni0.10Li0.05Zn0.85O and Ni0.10Li0.10Zn0.80O) were generated on Si(100) substrates by sol-gel and spin-coating technique.The films were wurtzite in structure and no other phase was found by X-ray diffraction.In(Ni,Li)-co-doped ZnO thin films,the photoluminescence spectrum recorded at room temperature displayed Li-related ultraviolet band at about 410 nm,which increases with rise in Li concentration.Furthermore,O2-defect-related red luminescence at abo... |
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| Keywords: | diluted magnetic semiconductors sol-gel spin-coating ferromagnetic photoluminescence |
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