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Blue-shifted stimulated emission from ZnO films deposited on SiO2 by atomic layer deposition |
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| Authors: | Ming Chih Lin Mong-Kai Wu Miin-Jang Chen Jer-Ren Yang Makoto Shiojiri |
| Affiliation: | 1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;2. Center for Emerging Material and Advanced Devices, National Taiwan University, 1 Rooseverlt Rd. Sec. 4, Taipei 10617, Taiwan, ROC;3. National Nano Device Laboratories, Hsinchu 30078, Taiwan, ROC;4. Professor Emeritus of Kyoto Institute of Technology, 1-297 Wakiyama, Kyoto 618-0091, Japan |
| Abstract: | ZnO films were prepared by atomic layer deposition upon a SiO2 layer on a Si substrate and treated by rapid thermal annealing. The optically-pumped random lasing actions with low threshold values were observed in the ZnO films on SiO2/Si substrates. With the decrease in ZnO film thickness or the increase in post-annealing duration, the stimulated emission shifted toward the shorter wavelength and the lasing threshold increased. The results can be attributed to the inter-diffusion between ZnO and SiO2, which causes the modification of bandgap renormalization in ZnO. |
| Keywords: | Atomic layer deposition ZnO film Photoluminescence Stimulated emission |
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