Self-organized one-axis-oriented PZT films with nano-domain structure |
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Authors: | Hiroshi Funakubo Shintaro Yokoyama Tomohiko Ozeki Atsushi Nagai Takahiro Oikawa |
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Affiliation: | Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405-4259, Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan |
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Abstract: | ![]() {100} One-axis-oriented PZT films with a thickness of 2 μm were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by metal organic chemical vapor deposition (MOCVD). These were obtained irrespective of the film thickness up to 2 mm and with a Zr/(Zr + Ti) ratio from 0.20 to 0.75. This was found to be due to the higher growth rate of these orientation grains than {110} and {111)} orientation grains. These films had columnar grains 50–100 nm in width. Moreover, they were found to include 908 nano-domains 10–20 nm in width. Dielectric constant, εr and the field induced-strain were maximum around a Zr/(Zr + Ti) ratio of 0.5, which was in good agreement with previous reports on sintered bodies with 100 times larger domains. This means that the domain size had any effect on εr or field-induced strain. |
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Keywords: | PZT Metal organic chemical vapor deposition Self-organized |
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