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Analytical model of thermal stress distribution of bonded structure under temperature field
Authors:Wang Xiaoyan  Zheng Shuang
Affiliation:a Northeastern University, Liaoning, PO 113, No. 3-11, Wenhua Road, Heping District, Shenyang 110004, China
b Shenyang Aerospace University, Liaoning, Shenyang 110034, China
Abstract:Thermal stress analytical model of three-layer bonded structure under temperature field based on physical mechanical law was established in this paper. Thermal stress distribution of bonded structure composed of silicone chip, polyimide film and composite under temperature gradient from −120 °C to 100 °C was also investigated. It is concluded that thermal stress at −120 °C is larger than that at 100 °C. The maximal and minimal normal stresses of bonded structure are in the polyimide film and silicone chip, respectively. Maximal shear stress is in adhesive layer between the polyimide film and the composite.
Keywords:Temperature field   Bonded structure   Thermal stress   Analytical model
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