GaN HEMT的温度特性及其应用

对0.25 μm双场板结构GaN HEMT器件的温度特性进行了研究.负载牵引测试结果显示,GaN HEMT增益的温度系数为-0.02 dB/°C、饱和输出功率系数为-0.004 dB/°C.大的增益温度系数结合GaN HEMT 自热效应引起的高温升对实际应用特别是功率MMIC的设计带来了挑战.按常温设计的GaN功率MM...

Temperature Characteristics for GaN HEMTs and Its Application

The research on temperature characteristics for 0.25μm dual field plated GaN HEMT was carried out.The Load-pull measurement showed a temperature coefficient of-0.02 dB/℃and-0.004 dB/℃for gain and saturation output power,respectively.Large coefficient for gain combined with high junction temperature induced by self heating leads a challenging to GaN HEMT application,especially GaN power MMIC design.The GaN power MMIC designed for room temperature application showed a great output power dropping at high temperature.There is also a remarkable difference for GaN power MMIC under continues wave and pulse mode operation. Methods to meet application requirement including minimizing temperature coefficient by decreasing 2DEG density and controlling rising temperature by improving thermal conduct through adopting thinned SiC substrate and optimizing layout design were proposed according to the temperature characteristics of GaN HEMT.