| GaNHEMT栅源与栅漏表面态与电流崩塌相关性探讨 |
| |
| 引用本文： | 靳翀,卢盛辉,杜江锋,罗谦,周伟,夏建新,杨谟华.GaNHEMT栅源与栅漏表面态与电流崩塌相关性探讨[J].微纳电子技术,2006,43(6):270-273. |
| |
| 作者姓名： | 靳翀 卢盛辉 杜江锋 罗谦 周伟 夏建新 杨谟华 |
| |
| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
| |
| 摘 要： | 基于实验测试数据,综合分析了栅源、栅漏串联电阻增大后电流崩塌I-V曲线变化差异。研究表明:在脉冲测试条件下,RS增大,栅下沟道开启程度减弱,漏电流ID变小;RD增大,栅下沟道漏端等效漏电压减小,膝电压VKNEE变大。该实验结果可望通过RD与RS表征研究导致GaNHEMT电流崩塌的表面态变化。
|
| 关 键 词： | 电流崩塌 串联电阻 氮化镓高电子迁移率晶体管 表面态 |
| 文章编号： | 1671-4776(2006)06-0270-03 |
| 修稿时间： | 2005年12月17 |
Comparison of the Gate-Drain and Gate-Source Effects of GaN HEMT on Current Collapse |
| |
| JIN Chong,LU Sheng-hui,DU Jiang-feng,LUO Qian,ZHOU Wei,XIA Jian-xin,YANG Mo-hua.Comparison of the Gate-Drain and Gate-Source Effects of GaN HEMT on Current Collapse[J].Micronanoelectronic Technology,2006,43(6):270-273. |
| |
| Authors: | JIN Chong LU Sheng-hui DU Jiang-feng LUO Qian ZHOU Wei XIA Jian-xin YANG Mo-hua |
| |
| Abstract: | Based on the measurement results,I-V characteristics before and after gate-source resistance and gate-drain resistance increased were compared.Increasing of gate-source resistance leads pinch-off of the channel,which makes saturated current decrease.The increasing of gate-drain resistance reduces effective drain voltage of the intrinsic channel,knee voltage becomes large consequently.This result is thought to describe the current collapse after stress quantitively. |
| |
| Keywords: | current collapse series resistance GaN HEMT surface state |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
