Roughness of ZnS:Pr,Ce/Ta2O5 interface andits effects on electrical performance of alternating current thin-filmelectroluminescent devices

Roughness effects of neighboring dielectrics on electrical characteristics of thin-film electroluminescent devices were investigated in order to improve the understanding of physics for the devices. Atomic force microscopy analysis reveal that thicker bottom layer of Ta₂O₅ shows rougher surface resulting in the rougher surface of ZnS:Pr,Ce layer. It can be easily seen that the dc leakage current increases rapidly with increase of surface roughness. Furthermore, it is notable that the initiation field of Poole-Frenkel current conduction is lowered by increasing surface roughness of Ta₂O₅ thin film. Internal charge-phosphor field (Q _int-F_p) analysis and capacitance-ac voltage (C-V) analysis for ITO-Ta₂O₅-ZnS:Pr,Ce-Al and ITO-Ta₂O₅-ZnS:Pr,Ce-Ta₂O₅-Al show that the steady state phosphor field is smaller and C-V curve in transition region is less steep with increase of root-mean-square roughness between lower dielectric and phosphor layer in the alternating current thin-film electroluminescent (ACTFEL) devices. Therefore, we conclude that interface roughness is one of the physical factors to change the electrical performance of ACTFEL device