Slow crack growth in ceramic materials at elevated temperatures |
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Authors: | A. G. Evans L. R. Russell D. W. Richerson |
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Affiliation: | (1) Rockwell International Science Center, 91360 Thousand Oaks, Cal.;(2) National Bureau of Standards, 20234 Washington, D.C.;(3) AiResearch Manufacturing Co. of Arizona, 85010 Phoenix, Ariz |
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Abstract: | ![]() Techniques for studying slow crack growth at high temperatures are described. The techniques are used to obtain crack growth data for a range of silicon nitrides between 1100 and 1400°C. For these materials the data suggest that the slow crack growth may be effectively characterized by the relation between crack velocity and stress intensity factor. Data obtained for mechanical and thermal fatigue modes indicate that these behaviors can be predicted with moderate accuracy from the isothermal, static stress parameters (for the range of conditions investigated). Finally, the application of slow crack growth data to failure prediction is described and illustrated using data for one of the materials tested. |
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