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Using ion implantation to adjust the transition temperature of superconducting films
Authors:B A Young  J R Williams  S W Deiker  S T Ruggiero  B Cabrera
Affiliation:

a Department of Physics, Santa Clara University, Santa Clara, CA 95053, USA

b National Institute of Standards and Technology, Boulder, CO 80303, USA

c Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA

d Department of Physics, Stanford University, Stanford, CA 94305, USA

Abstract:We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.
Keywords:Author Keywords: Ion implantation  Superconductor  Tc suppression  Cryogenic detectors  Molybdenum
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