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Optical and electronic properties of some semiconductors from energy gaps
Affiliation:1. «Gheorghe Asachi» Technical University of Iasi, Department of Natural and Synthetic Polymers, Bd. Prof. D. Mangeron 73, 700050 Iasi, Romania;2. «Costin D. Nenitescu» Centre of Organic Chemistry, 202 B Splaiul Independentei, 71141 Bucharest, Romania;3. «Petru Poni» Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41 A, 700487 Iasi, Romania;1. Laboratoire Physico-Chimie de l’Etat Solide, Université de Sfax, Faculté des Sciences de Sfax, BP. N° 1171, 3000, Tunisia;2. Laboratoire de Physique Appliquée, Université de Sfax, Faculté des Sciences de Sfax, BP. N° 1171, 3000, Tunisia;3. Université de Roi Abdulaziz, Département de Chimie, Faculté des Sciences de Jeddah, Saudi Arabia;1. Riga Technical University, Institute of Applied Chemistry, 3/7 Paul Walden Str., LV-1048 Riga, Latvia;2. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia;3. Riga Technical University, Institute of Technical Physics, 3/7 Paul Walden Str., LV-1048 Riga, Latvia;1. Laboratoire d’Application de la Chimie aux Ressources et Substances Naturelles et à l’Environnement, Département de Chimie, Université de Carthage, Faculté des Sciences de Bizerte, Zarzouna, Bizerte 7021, Tunisia;2. Departamento de Física, Universidad de la Laguna, 38206 La Laguna, Spain;1. Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology, Technická 5, 166 28 Prague, Czech Republic;2. Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, v.v.i., Chaberská 57, 182 51 Prague, Czech Republic;3. Nuclear Physics Institute, Academy of Sciences of the Czech Republic, v.v.i., 250 68 ?e?, Czech Republic;4. Department of Physics, Faculty of Science, J. E. Purkinje University, ?eské mláde?e 8, 400 96 Ústí nad Labem, Czech Republic;5. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Cukrovarnická 10, 162 53 Prague, Czech Republic
Abstract:II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.
Keywords:Refractive index  Energy gap  Ionicity  Electronic polarisability  Dielectric constant
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