LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well |
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| Affiliation: | 1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China;2. Engineering Research Center on Solid-State Lighting and its Informationization of Guangdong Province, Guangzhou 510641, China;3. Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100022, China;4. College of Field Engineering, PLA University of Science & Technology, Nanjing 210007, China |
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| Abstract: | In this paper, we report on the experimental and theoretical study of BInGaAs/GaAs Single Quantum Well elaborated by Metal Organic Chemical Vapor Deposition (MOCVD). We carried out the photoluminescence (PL) peak energy temperature-dependence over a temperature range of 10–300 K. It shows the S-shaped behavior as a result of a competition process between localized and delocalized states. We simulate the peak evolution by the empirical model and modified models. The first one is limited at high PL temperature. For the second one, a correction due to the thermal redistribution based on the Localized State Ensemble model (LSE). The new fit gives a good agreement between theoretical and experimental data in the entire temperature range. Furthermore, we have investigated an approximate analytical expressions and interpretation for the entropy and enthalpy of formation of electron-hole pairs in quaternary BInGaAs/GaAs SQW. |
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| Keywords: | S-shaped BInGaAs Thermodynamic parameters Localized state exciton Photoluminescence |
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